SiC, silicon carbide, is a key material of the future. It enables more efficient and sustainable technologies and plays a key role in tackling global challenges such as the energy transition and the reduction of CO2emissions.
Engineers, institutes and scientists around the world are therefore working hard to perfect SiC crystal growth processes.
With our expertise, we help to ensure that the challenging manufacturing process at extreme temperatures of up to 2,000°C and beyond is carried out reliably and precisely to the highest quality standards.
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SiC is grown in the form of single crystals, i.e. material that consists of a single, perfectly ordered crystal structure. This cultivation is necessary because only flawless single crystals provide the properties that are required in high-tech applications.
The process of crystal growth is often carried out using the sublimation method (also known as “physical vapor transport”). The raw material (e.g. silicon from quartz) is vaporized at extremely high temperatures and then deposited on a cooler seed crystal, where it grows layer by layer.
Industry:
Research & development, semiconductor technology
Procedure:
SiC crystal growing, Physical Vapour Transport (PVT)
Solution:
for integration into an existing crystal growing furnace Services:
Consulting, design/engineering, technical documentation
Result:
Increasing and ensuring process stability, quality and safety, simple handling and cost reduction
The production of SiC is expensive, as both the raw materials and the necessary equipment and energy expenditure require considerable investment. The material yield is often limited, which further increases the costs.
The manufacturing process must therefore run smoothly and without interruptions or failures. The reliable quality of all components is therefore absolutely essential.
In addition, the properties of the crystals must reproducible with every run. be reproducible. Various crystal defects significantly impair the electrical properties. The quality of the seed and precise process control in the crystal growing system are essential.
The further development of semiconductor technology requires constant research and development in order to optimize the quality of crystals, conquer new areas of application and define standards.
Particularly in the field of application dealt with here, i.e. international cutting-edge research, only components that enable the highest quality and consistency are used. In the case discussed here, a heater for a laboratory-scale crystal growing system as well as associated advice.
For an existing stove with specified performance and construction data, a heater should be designed that reliably delivers the following results:
consisting of a heater and connections and provided the technical documentation.
Thanks to Graphite Materials’ extensive knowledge of materials and processes, our team completed the task in around three months, from initial contact and engineering to the actual order. enables a stable process and a homogeneous temperature field in the PVT growth crucible at temperatures consistently above 2000°C, which enables a higher process yield. 